100W 4000‑8000MHz 100W GaN RF Power Amplifier Module RS485 & TTL Communication S for Anti Drone System
Product Overview
The TTSK‑TZ‑KPG‑100W is a high‑performance GaN‑based microwave RF power amplifier covering 4000‑8000 MHz frequency range. It delivers typical 100W saturated output power, with adjustable output ranging 100‑150W and maximum power gain up to 45 dB. This module is equipped with dual digital communication ports via a 2.54mm 2*4 connector. RS485 interface enables detection for temperature, current, voltage and RF output power data. TTL communication supports connection with digital sources to configure frequency band and output‑power parameters. Input port adopts SMA‑Female connector and output uses N‑Female connector. It maintains ±1.0 dB power stability across wide temperature scope. All performance parameters are measured under 25℃ ambient environment. Custom RF connectors or adjusted frequency ranges can be offered for special test requirements.
Key Features
Advanced GaN semiconductor technology for high efficiency, outstanding high‑temperature tolerance and high‑voltage resistance
Operates across 4000‑8000 MHz; output power spans 100‑150W for diverse lab amplification tasks
Max power gain reaches 45 dB, high‑linearity circuit design ensures low‑distortion RF signal output
RS485 interface supports detection of temperature, current, voltage and RF output power status
TTL communication channel works with digital signal sources to set frequency band and output power values
Reliable power consistency with ±1.0 dB deviation within ‑40℃ ~ +55℃ temperature scope
Technical Specifications
| Item |
Specification |
Remarks |
| Model |
TTSK‑TZ‑KPG‑100W |
|
| Frequency Range |
4000‑8000 MHz |
|
| DC Operating Voltage |
28‑32V |
Typical value: 32V |
| Maximum Output Power |
100W |
Typical @10.5A |
| Output Power Range |
100‑150W |
|
| Output Current Range |
10‑13.5 A |
|
| Typical Amplifier Efficiency |
20% |
|
| Maximum Power Gain |
45 dB |
|
| Standard Input Power |
5 dBm |
|
| Maximum Non‑Damaging Input Power |
≤19 dBm |
Avoid over‑input to prevent hardware damage |
| Output Port VSWR |
≤2 |
No‑power network split test |
| Operating Ambient Temperature |
-10℃ ~ +55℃ |
|
| Power Stability |
±1.0 dB |
Tested at ‑40℃ ~ +55℃ |
| Power Supply Requirement |
≥15A @32V DC |
For 100W continuous‑wave output |
| Communication Interface |
RS485 & TTL |
2.54mm 2*4 connector |
| RF Input Connector |
SMA‑Female |
|
| RF Output Connector |
N‑Female |
|
| Overall Dimension |
1707824.5 mm |
|
| Mounting Hole Dimension |
164.4*72.5 mm |
Fit for M3.0*10 steel screws |
| Cooling Requirement |
Bottom‑mount heat sink |
Forced air cooling or conductive heat sink |
| Mounting Method |
Screw‑fixed installation |
|
Lead time
Customization
Product Description
Packing and Delivery
FAQ
Q1: What digital communication interfaces are built‑in this amplifier module?
A1: It includes RS485 and TTL interfaces via a 2.54mm 2*4 connector. RS485 enables detection of temperature, current, voltage and RF output power; TTL connects to digital sources for frequency band and output‑power configuration.
Q2: What is the safe input power limit for this GaN microwave amplifier?
A2: Recommended standard input power is 5 dBm. Maximum non‑damaging input power shall not go beyond 19 dBm to protect internal circuits.
Q3: What is the maximum power gain of this amplifier unit?
A3: Its maximum power gain reaches 45 dB under rated operating condition.
Q4: What are the RF input and output connector types?
A4: RF input is SMA‑Female connector, RF output is N‑Female connector. Custom RF connectors can be supported upon request.
