100W Wideband GaN RF Power Amplifier TZ-100-400/200-400/400-700/700-1020MHz for Anti Drone System
Product Overview
The TTSK‑TZ‑KGAN‑100W is a high‑performance GaN‑based RF power amplifier module covering 100‑1020 MHz frequency range. It delivers up to 100W (50 dBm) output power and integrates a built‑in high‑efficiency signal source, with maximum power gain reaching 45 dB and typical amplifier efficiency up to 50%. This metal‑cased amplifier supports external level‑based enable control. Two hardware variants are offered: standard version and version fitted with isolator. Designed with bottom‑mount thermal structure, it works within wide temperature scope and fits multiple RF test setups. All performance data is tested under 25℃ ambient environment. Custom connector options are available on demand.
Key Features
Built‑in high‑efficiency signal source, no extra signal source needed for many test setups
Adopts GaN semiconductor technology, delivers high efficiency, good heat‑resistance and voltage‑withstand performance
Maximum power gain up to 45 dB, high linearity output with low signal distortion
Stable power performance with ±1.5 dB fluctuation across wide temperature span
External enable signal control via white wire, convenient for equipment workflow control
Metal sealed module housing, N‑Female RF output port, customizable connectors supported
Technical Specifications
| Item |
Specification |
Remarks |
| Model |
TTSK‑TZ‑KGAN‑100W |
|
| Frequency Range |
100‑1020 MHz |
Sub‑ranges:100‑400 /200‑400 /300‑600 /400‑700 /700‑1020 MHz; Built‑in high‑efficiency signal source |
| Max Output Power |
100W (50 dBm) |
≤7.8A |
| Max Power Gain |
45 dB |
|
| Typical Efficiency |
50% |
|
| Working Voltage DC |
24‑32V |
Typical value:28V |
| Power Supply Requirement |
≥9A |
For continuous‑wave 100W output |
| Operating Environment Temperature |
-40℃ ~ +55℃ |
|
| Power Stability |
±1.5 dB |
‑20℃ ~ +75℃ |
| Output Port VSWR |
≤2 |
|
| RF Output Connector |
N‑Female |
Customizable RF connector available |
| Enable Control |
White wire |
High‑level turn‑on; Low‑level turn‑off |
| Dimension‑Standard |
156.564.724.5 mm |
Excluding N‑Female connector |
| Dimension‑With Isolator |
187.164.724.5 mm |
Excluding N‑Female connector |
| Weight |
471g /500g |
Standard / With isolator |
| Cooling Requirement |
Bottom‑mount heat sink |
Forced‑air cooling or conductive heat sink required |
| Mounting Hardware |
M3.0 screws |
|
Lead time
Customization
Product Description
Packing and Delivery
FAQ
Q1: Does this amplifier come with an internal signal source?
A1: Yes, this unit is equipped with built‑in high‑efficiency signal source, covering multiple sub‑ranges within 100‑1020 MHz.
Q2: What DC power input should I prepare for 100W continuous‑wave output?
A2: Working voltage ranges 24‑32V DC, typical operating voltage is 28V. For continuous‑wave 100W output, power supply should provide at least 9A current.
Q3: What is the maximum gain value of this GaN amplifier module?
A3: Its maximum power gain reaches 45 dB under rated working condition.
Q4: Can I change the RF output connector type?
A4: Yes. Custom RF connectors or special frequency adjustments can be supported. Please contact our sales team to share your detailed requirements.
