30W 300-6300MHZ High‑Gain GaN RF Amplifier Module with PA Enable for Anti Drone System
Product Overview
The TTSK‑TZ‑KPGAN‑30W is a high‑performance GaN‑based RF power amplifier working across 300‑6300 MHz frequency range. It delivers typical 30W output power and can reach peak output up to 50W. This unit provides 38 dB maximum power gain and 45‑50 dB small‑signal gain with gain flatness ≤7 dB. Equipped with PA enable function, it can be switched on with 3.3‑5V high‑level signal for convenient test workflow control. Both RF input and output adopt SMA‑Female connectors. Built‑in metal housing, this amplifier runs reliably within‑30℃ ~ +55℃ ambient temperature with ±1.5 dB power stability. All performance data is measured at 25℃ ambient environment. Custom RF connectors can be offered according to project requirements.
Key Features
- Adopt advanced GaN semiconductor technology for high efficiency, excellent high‑temperature tolerance and voltage‑resistant capability
- Covers 300‑6300 MHz frequency range; typical output power 30W, peak output can reach 50W
- Outstanding gain performance: max power gain 38 dB, small‑signal gain 45‑50 dB, gain flatness ≤7 dB
- PA enable control interface: high‑level signal (3.3‑5V) for power‑on, low‑level signal for power‑off
- Highly‑linear circuit design with low distortion to preserve clean RF signal quality
- Output power keeps ±1.5 dB stability within wide operating temperature scope from‑30℃ to +55℃
Technical Specifications
| Item |
Specification |
Remarks |
| Model |
TTSK‑TZ‑KPGAN‑30W |
|
| Frequency Range |
300‑6300 MHz |
|
| Operating Voltage DC |
24‑32V |
Typical value:28V |
| Max Output Power |
30‑50W |
Typical 30W @ ≤4.7A |
| Typical Amplifier Efficiency |
25% |
Tested at 30W output |
| Maximum Power Gain |
38 dB |
|
| Small‑Signal Gain |
45‑50 dB |
|
| Gain Flatness |
≤7 dB |
|
| Standard Input Power |
+7 dBm |
|
| Maximum Non‑Damaging Input Power |
≤13 dBm |
Do not exceed this value |
| Input & Output Port VSWR |
≤2.5 |
Measured under no‑power network test |
| Operating Ambient Temperature |
-30℃ ~ +55℃ |
|
| Power Stability |
±1.5 dB |
Tested from‑30℃ ~ +55℃ |
| Power Supply Requirement |
≥6.5A @28V DC |
For 30W CW output |
| PA Enable Control |
High‑level ON / Low‑level OFF |
High‑level:3.3‑5V |
| RF Input / Output Connector |
SMA‑Female |
Customizable connectors available |
| Dimension |
13062.924.5 mm |
|
| Weight |
360 g |
|
| Mounting Hole Size |
125.3*57.7 mm |
Fit for M3.0*4 steel screws |
| Cooling Requirement |
Bottom‑mount heat sink |
Forced air cooling or conductive heat sink |
| Mounting Method |
Screw‑fixed installation |
|
Lead time
Customization
Product Description
Packing and Delivery
FAQ
Q1: What frequency range does this GaN power amplifier cover?
A1: It operates within 300‑6300 MHz, widely used for multiple RF lab measurement tasks.
Q2: What is the safe input power limit for this amplifier?
A2: Recommended standard input power is +7 dBm. The maximum non‑damaging input power shall not exceed 13 dBm.
Q3: How does the PA enable control function work?
A3: Apply 3.3‑5V high‑level signal to turn the amplifier on; apply low‑level signal to turn it off.
Q4: What power supply parameters do I need for 30W continuous‑wave output?
A4: DC working voltage 24‑32V, typical 28V. The power source should provide at least 6.5A current for 30W CW output.
