MF26 transistor microelectronic component

Item No.: 03404
The MF26 operates at 28V, offering a universal solution for various RF and microwave applications with high efficiency and gain capability, making it an ideal choice for linear and saturated amplifier circuits.
Description Review
Description

MF26 transistor microelectronic component


 

summary

The MF26 operates at 28V, offering a universal solution for various RF and microwave applications with high efficiency and gain capability, making it an ideal choice for linear and saturated amplifier circuits.

apply

l Radio/Television/Emergency Communications

l Wireless Coverage

l Industrial Internet of Things

l Test and Measurement Equipment

 

MF26

 

characteristic

u Working frequency range from 2110 MHz to 2170 MHz

u Input pre-match

u The typical value at a test frequency of 2140 MHz

Ø 28V DC power supply

Ø 10.8 dB power gain

Ø Typical output power: 60.3 W

Ø The Psat efficiency is 62.9%.

u Complies with Pb-free and RoHS standards

 

 

 

 

 

 

 

l Important Notes (Power transistor bias circuit power-on sequence)

Open the device

closing device

1. Set VGS to the shutdown voltage (typically 5 V)

2. Set the VDS to the operating voltage (28V)

3. Increase the VGS until the IDS current is reached

4. Apply the required level of radio frequency input power

1. Close the RF input power

2. Close VDS

3. Close VGS

 

 

Pin Definition

name

Pin

description

Simplified Flowchart

MF26

D

Drain drain electrode

 

G

Gate grid

 

 

 

 

Limit value (unless otherwise specified, TC = 25°C simultaneously)

parameter

symbol

Limit Value

unit

Source-drain voltage

VDSS

65

Volts

Gate-source voltage

VGS

-8, +2

Volts

storage temperature

TSTG

-65, +150

°C

junction temperature

TJ

220

°C

welding temperature

TS

245

°C

 

 

thermal performance

characteristic

symbol

price

unit

Thermal resistance; junction temperature to housing

T C = 80°C, T J = 200°C, DC power consumption

RJC

1.8

°C/W

u The RJC is tested solely under DC conditions and is associated with the highest thermal resistance value under all test conditions. It may vary under different RF operating conditions, such as CW signals or pulsed RF signals.

u Continuous operation at the maximum junction temperature will affect MTTF.

 

 

Electrical characteristics (unless otherwise specified, TC = 25°C)

direct-current characteristic

characteristic

symbol

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